1 edition 1.1 july 1999 fll200ib-1, fll200ib-2, FLL200IB-3 l-band medium & high power gaas fet item drain-source voltage gate-source voltage total power dissipation storage temperature channel temperature symbol v ds v gs 15 -5 83.3 -65 to +175 175 t c = 25 c v v w c c p t t stg t ch condition unit rating absolute maximum rating (ambient temperature ta=25 c) fujitsu recommends the following conditions for the reliable operation of gaas fets: 1. the drain-source operating voltage (v ds ) should not exceed 10 volts. 2. the forward and reverse gate currents should not exceed 53.6 and -11.6 ma respectively with gate resistance of 25 ? . 3. the operating channel temperature (t ch ) should not exceed 145 c. item saturated drain current transconductance pinch-off voltage gate source breakdown voltage drain current output power at 1db g.c.p. power gain at 1db g.c.p. symbol i dss -812 - 4000 - -1.0 -2.0 -3.5 -5 -- 10.0 11.0 - - 4.8 6.0 41.5 42.5 - v ds = 5v, i ds = 480ma v ds = 5v, i ds = 4800ma v ds = 5v, v gs = 0v i gs = -480 a v ds = 10v i ds = 0.6 i dss (typ.) v ds = 10v i ds = 0.6 i dss (typ.) a ms v db 12.0 13.0 - db 10.0 11.0 - db a dbm v g m v p v gso p 1db fll200ib-1 fll200ib-2 FLL200IB-3 g 1db i dsr power added efficiency -34- % r th test conditions unit limit typ. max. min. electrical characteristics (ambient temperature ta=25 c) thermal resistance - 1.6 1.8 channel to case 10v x i ds r x r th c/w add channel temperature rise --80 c ? t ch g.c.p.: gain compression point case style: ib fll200ib-1 fll200ib-2 FLL200IB-3 f=1.5ghz f=2.3ghz f=2.6ghz f=1.5ghz f=2.3ghz f=2.6ghz features ?high output power: p 1db = 42.5dbm (typ.) ?high gain: g 1db = 13.0db (typ.)@1.8ghz (fll200ib-1) ?high pae: add = 34% (typ.) ?proven reliability ?hermetically sealed package description the fll200ib-1, fll200ib-2, FLL200IB-3 are power gaas fets that are specifically designed to provide high power at l-band frequencies with gain, linearity and efficiency superior to that of silicon devices. the performance in multitone environments for class ab operation make them ideally suited for base station applications. fujitsu s stringent quality assurance program assures the highest reliability and consistent performance.
2 fll200ib-1, fll200ib-2, FLL200IB-3 l-band medium & high power gaas fet power derating curve drain current vs. drain-source voltage 40 20 80 100 60 0 50 100 150 200 2 046810 case temperature ( c) drain-source voltage (v) total power dissipation (w) 4000 2000 8000 6000 drain current (ma) v gs =0v -0.5v -1.5v -2.0v -1.0v
3 fll200ib-1 l-band medium & high power gaas fet output power vs. input power v ds =10v i ds 0.6 i dss f = 1.5 ghz 21 23 25 27 29 31 input power (dbm) 44 42 40 38 36 34 32 30 40 50 20 10 output power (dbm) add p out add (%) s-parameters v ds = 10v, i ds = 4800ma frequency s11 s21 s12 s22 (mhz) mag ang mag ang mag ang mag ang 1000 .888 124.3 1.517 13.5 .009 -5.0 .819 150.3 1100 .841 110.9 1.761 -.2 .012 -17.3 .796 147.5 1200 .754 91.4 2.113 -18.0 .015 -33.3 .786 145.9 1300 .584 60.4 2.559 -42.4 .019 -56.8 .790 142.7 1400 .353 1.2 2.876 -73.3 .022 -86.9 .790 140.7 1500 .341 -87.7 2.754 -105.9 .021 -119.8 .800 136.5 1600 .490 -133.3 2.443 -132.5 .019 -147.5 .787 131.6 1700 .609 -156.4 2.215 -156.1 .017 -172.2 .764 127.5 1800 .680 -170.8 2.096 -179.2 .016 162.7 .732 123.4 1900 .719 179.5 2.034 155.9 .015 135.4 .716 121.2 2000 .753 173.8 1.953 126.8 .015 103.5 .729 116.4 2500 .942 145.3 .563 -15.5 .006 -39.0 .451 32.7 +j250 +j100 +j50 +j25 +j10 0 -j10 -j25 -j50 -j100 -j250 s 11 s 22 180 +90 0 -90 s 21 s 12 3 1 0.06 2 1ghz 1ghz 1ghz 1ghz 2 2 1.1 1.2 1.2 1.3 1.2 1.3 1.3 1.4 1.4 1.5 1.6 1.6 1.7 1.8 1.8 1.9 2.5 2 2 1.1 1.4 1.4 1.5 1.5 1.6 1.6 1.7 1.7 1.8 1.8 1.9 1.9 2.5 2.5 0.1 250 50 ? 25 10 scale for |s 12 | scale for |s 21 |
4 fll200ib-2 l-band medium & high power gaas fet output power vs. input power v ds =10v i ds 0.6 i dss f = 2.3 ghz 23 25 27 29 31 33 input power (dbm) 44 42 40 38 36 34 32 30 40 50 20 10 output power (dbm) add p out add (%) s-parameters v ds = 10v, i ds = 4800ma frequency s11 s21 s12 s22 (mhz) mag ang mag ang mag ang mag ang 500 .944 157.3 1.164 60.9 .004 -.8 .906 166.1 1000 .937 127.4 .835 28.8 .006 -16.3 .855 153.8 1500 .880 90.3 1.090 -14.0 .010 -55.4 .826 141.4 1700 .791 68.9 1.421 -39.7 .014 -81.9 .810 135.6 2000 .379 27.8 2.283 -100.2 .025 -147.2 .814 125.6 2300 .309 82.4 2.569 179.4 .031 128.7 .789 104.9 2500 .408 41.8 2.632 128.5 .035 78.5 .651 83.8 2700 .480 -43.5 2.631 55.1 .039 6.2 .290 26.4 3000 .803 -158.4 .772 -68.4 .012 -111.1 .718 -177.7 3500 .915 135.8 .030 -151.4 .001 72.1 .937 131.5 4000 .926 102.3 .013 -8.2 .002 8.3 .947 109.9 +j250 +j100 +j50 +j25 +j10 0 -j10 -j25 -j50 -j100 -j250 s 11 s 22 180 +90 0 -90 s 21 s 12 3 1 0.06 2 4ghz 4ghz 2.9ghz 2.9ghz 1.0ghz 2 1.7 1.8 2.7 2.6 1.5 1.5 1.6 1.7 1.8 2.8 2.8 2.9 2.9 3.0 3.0 1.9 3.5 2.7 2.7 2.5 2.5 2.6 2.6 2.8 1.9 1.9 2.0 2.0 2.1 2.1 2.3 2.2 2.4 2.5 2.5 2.4 2.3 2.2 2.1 2.0 0.1 250 50 ? 25 100 10 scale for |s 12 | scale for |s 21 | 1.0ghz
5 FLL200IB-3 l-band medium & high power gaas fet output power vs. input power v ds =10v i ds 0.6 i dss f = 2.6 ghz 23 25 27 29 31 33 input power (dbm) 44 42 40 38 36 34 32 30 40 50 20 10 output power (dbm) add p out add (%) s-parameters v ds = 10v, i ds = 4800ma frequency s11 s21 s12 s22 (mhz) mag ang mag ang mag ang mag ang 500 .962 166.6 1.649 63.2 .007 41.9 .837 168.9 1000 .933 144.9 1.143 30.0 .015 32.2 .798 156.2 1500 .864 115.5 1.368 -12.1 .031 2.8 .726 142.6 2000 .548 64.6 2.320 -75.5 .059 -50.7 .526 137.3 2500 .220 -111.2 3.742 -173.7 .051 -138.8 .560 107.0 3000 .214 -85.0 4.634 7.9 .039 -126.8 .782 -128.3 3500 .923 178.6 .375 -118.7 .017 117.2 .898 166.5 4000 .953 150.4 .065 -162.9 .005 84.4 .939 147.5 4500 .952 131.2 .020 168.3 .001 75.2 .951 133.4 5000 .953 113.9 .008 143.6 .001 63.7 .957 119.1 +j250 +j100 +j50 +j25 +j10 0 -j10 -j25 -j50 -j100 -j250 s 11 s 22 180 +90 0 -90 s 21 s 12 8 0.06 0.06 6 4 2 5.0 1.5ghz 1.5ghz 2.9 1.5ghz 1.5ghz 2.8 2.9 2.9 2.8 2.7 2.7 5.0 2.5 2.5 2.8 2.6 2.6 2.6 2.2 2.1 3.0 3.0 2.3 3.1 3.1 3.4 3.2 3.2 3.3 3.3 3.4 3.5 3.5 4.0 4.0 4.5 5.0 4.5 3.5 2.0 2.0 3.1 3.0 2.9 2.1 2.3 2.3 2.2 2.4 2.1 2.2 2.0 2.0 2.5 2.5 2.6 2.6 2.7 2.7 0.10 0.10 250 50 ? 100 10 scale for |s 21 | scale for |s 12 |
6 for further information please contact: fujitsu compound semiconductor, inc. 2355 zanker rd. san jose, ca 95131-1138, u.s.a. phone: (408) 232-9500 fax: (408) 428-9111 www.fcsi.fujitsu.com fujitsu microelectronics, ltd. compound semiconductor division network house norreys drive maidenhead, berkshire sl6 4fj phone:+44 (0)1628 504800 fax:+44 (0)1628 504888 fujitsu limited reserves the right to change products and specifications without notice. the information does not convey any license under rights of fujitsu limited or others. ? 1998 fujitsu compound semiconductor, inc. printed in u.s.a. fcsi0598m200 fujitsu compound semiconductor products contain gallium arsenide (gaas) which can be hazardous to the human body and the environment. for safety, observe the following procedures: caution ?do not put these products into the mouth. ?do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. ?observe government laws and company regulations when discarding this product. this product must be discarded in accordance with methods specified by applicable hazardous waste procedures. fll200ib-1, fll200ib-2, FLL200IB-3 l-band medium & high power gaas fet 2-r 1.6 0.15 (0.063) 0.6 (0.024) 10.7 (0.421) 12.0 (0.422) 17.0 0.15 (0.669) 21.0 0.15 (0.827) 12.9 0.2 (0.508) 2.0 min. (0.079) 2.0 min. (0.079) 0.2 max. (0.008) 1.45 (0.059) case style "ib" metal-ceramic hermetic package unit: mm(inches) 1. gate 2. source (flange) 3. drain 5.2 max. (0.205) 2.6 0.15 (0.102) 0.1 (0.004) 1 2 3
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